a d v a n c e d s e m i c o n d u c t o r, i n c. rev. 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ces i c = 50 ma 36 v bv ceo i c = 100 ma 16 bv ebo i e = 25 ma 4.0 v i ces v ce = 15 v 25 ma h fe v ce = 5.0 v i c = 4.0 a 10 80 --- c c v cb = 15 v f = 1.0 mhz 160 pf g p c v cc = 12.5 v p out = 45 w f = 175 mhz 5.0 75 db % npn silicon rf power transistor BLW60C description: the asi BLW60C is designed for 12.5 v high band applications up to 175 mhz. features: ? common emitter ? p g = 5.0 db at 45 w/175 mhz ? omnigold ? metalization system maximum ratings i c 9.0 a v cesm 36 v v ceo 16 v v ebo 4.0 v p diss 100 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 1.75 c/w package style .380 4l stud minimum inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 b c d e f g a maximum .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm h .090 / 2.29 .100 / 2.54 dim .220 / 5.59 .230 / 5.84 .490 / 12.45 .450 / 11.43 i j .155 / 3.94 .175 / 4.45 .750 / 19.05 .980 / 24.89 .100 / 2.54 e f d ?c b .112x45 g h j i a #8-32 unc-2a c b ee
|
